breakdown potential
英 [ˈbreɪkdaʊn pəˈtenʃl]
美 [ˈbreɪkdaʊn pəˈtenʃl]
击穿电压
双语例句
- The breakdown potential was highest at the solution of pH 6.0.
当溶液的pH为6.0时，点蚀电位最高。 - In anodic polarization test ( sweeing and stair-steps), the maximum ( critical) current density increases while the passivation potential and breakdown potential lowers with the reduction of the grain size.
在阳极极化实验（包括扫描法和台阶法）中，致钝电流虽晶粒尺寸减小而增大，而致钝电位和击穿电位都随着晶粒细化而降低。 - The theory of laser-induced breakdown spectroscopy ( LIBS) and its present status of application potential are described and the measurement of carbon content in fly ash by using this method and results of analysis presented.
介绍了激光感生击穿光谱技术（LIBS）的原理及应用现状，并且给出了利用激光感生击穿光谱技术测量飞灰含碳量的方法与分析结果。 - Spontaneous symmetry Breakdown and an Integral Expression of the Effective Potential in Quantum Electrodynamics
自发对称性破缺与量子电动力学中有效势的积分表示式 - Simulation study on the electrical breakdown characteristics is needed to realize the potential of the promising high voltage device-4H-SiC BC MOSFET.
为了更好地发挥碳化硅埋沟MOSFET在功率性能的优势和潜力，必须对器件的电学击穿特性进行较为深入的模拟研究。 - A method is introduced to estimate the static breakdown voltage of vacuum interrupters. Based on the principle of statistics, with computer added potential distribution analysis, the static breakdown voltage of vacuum interrupters cna be estimated from few sample tests.
基于统计学原理，借助于计算机辅助电场分析的手段，可以由少量的试验结果估计出大量真空灭弧室的静态击穿电压。 - By applying potential-dynamic scanning method, the relationship between breakdown potential and Cl~-concentration of aluminum alloys has been studied.
通过动电位扫描法，研究了铝合金的击穿电位（Breakdown.Potential）和氯离子浓度的关系。 - SiC materials with a high electric breakdown field, a high saturated electron drift velocity and a high thermal conductivity, have a great potential in power devices.
SiC材料具有高电流击穿场、高饱和电子漂移速率、高热导率等特性，使得SiC材料在功率器件领域具有巨大的潜力。 - First, for sand body improve low levels of injection-production and poor reservoir formed by seepage of residual oil, through the breakdown of water and plugging potential invalid cycle parts.
一是针对砂体注采完善程度低及油层渗流能力差形成的剩余油，通过细分注水和封堵无效循环部位进行挖潜。 - GaN has larger bandgap, breakdown voltage, electron saturation velocity which made it have great potential to be applied for high temperature, high power and high frequency electronics compared to traditional Si.
GaN作为第三代半导体，和传统的Si相比具有更大的禁带宽度，更高击穿电场、更高的电子饱和速度等优点，使得其在高温，高频，大功率等场合具有令人瞩目的应用前景。